Micron Technology, Inc. (MU) broke ground recently on an advanced wafer fabrication facility located within the company’s existing NAND manufacturing complex in Singapore. This new facility represents a planned investment of approximately USD 24bn (SGD 31bn) over 10 years and is designed to ultimately provide 700,000 square feet of cleanroom space. Wafer output is scheduled to begin in the second half of calendar 2028, helping Micron address growing market demand for NAND technology driven by the rapid expansion of AI and data-centric applications.
This new fab will become an integral part of Micron’s NAND Center of Excellence in Singapore. The facility provides the essential capacity to support continued technology transitions, positioning Micron to meet long-term demand for advanced storage solutions. Additionally, co-locating R&D with manufacturing improves efficiencies, accelerates time-to-market, and deepens research partnerships between industry and academia.
Micron’s previously announced high-bandwidth memory (HBM) advanced packaging facility, also located in the same Singapore manufacturing complex, is on track to contribute meaningfully to Micron’s HBM supply in calendar year 2027. As HBM becomes a part of Micron’s Singapore manufacturing footprint, the company expects opportunities for synergies between NAND and DRAM production. Micron will maintain flexibility in managing the pace of capacity ramps in the new facility to align with market demand.